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Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification I Features
* High forward current transfer ratio hFE which has satisfactory linearity * Low collector to emitter saturation voltage VCE(sat) * Full-pack package which can be installed to the heat sink with one screw
9.90.3
3.00.5
4.60.2 2.90.2
13.70.2 4.20.2 Solder Dip
15.00.5
3.20.1
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 80 80 6 5 3 20 2 150 -55 to +150 C C Unit V
2.540.30 5.080.50 1 2 3
V V A A W
1: Base 2: Collector 3: Emitter TO-220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Symbol ICES ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1
*
Conditions VCE = 70 V, VBE = 0 VCE = 70 V, IB = 0 VEB = 6 V, IC = 0 IC = 30 mA, IB = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 A, VCC = 50 V
Min
Typ
Max 100 100 1
Unit A A mA V
80 70 10 1.8 0.7 30 0.5 4.5 0.5 250
hFE2 Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250 VBE VCE(sat) fT ton tstg tf
V V MHz s s s
1
2SD2549
PC T a
30 8 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink TC=25C 7 7
Power Transistors
IC VCE
8 Ta=25C
IC VBE
Collector power dissipation PC (W)
25 (1)
Collector current IC (A)
6 5 4 3 2 1 0 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA
Collector current IC (A)
12
6 5 4 3 2 1 0
20
15
10
(2)
5 (3) 0 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
10 Ta=25C 103
hFE IC
Ta=25C
Area of safe operation (ASO)
30 Non repetitive pulse TC=25C 10
Forward current transfer ratio hFE
Collector current IC (A)
1
ICP 3 IC 10ms 1s 0.3
102
t=1ms
10-1
1
10
10-2
0.1 1 10-2
10-3 10-2
10-1
1
10
10-1
1
10
1
3
10
30
100
300
Collector current IC (A)
Collector current IC (A)
Collector to emitter voltage VCE (V)
Rth(t) t
100 (1)
Thermal resistance Rth(t) (C/W)
(2) 10
1 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 0.8A (8W) and with a 100 x 100 x 2mm Al heat sink 0.1 1 10 100 1000
Time t (s)
2
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2001 MAR

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